Thursday, July 10, 2014

Silicon oxide for better computer memory: Use of porous silicon oxide reduces forming voltage, improves manufacturability

A breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods.



from Geochemistry News -- ScienceDaily http://ift.tt/1y1pRb1

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